SS8050 transistor (npn) features complimentary to ss8550 marking: y1 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 1.5 a p c collector power dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =40v, i e =0 0.1 a collector cut-off current i ceo v cb =20v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce =1v, i c = 100ma 120 400 dc current gain h fe(2) v ce =1v, i c = 800ma 40 collector-emitter saturation voltage v ce(sat) i c =800ma, i b = 80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b = 80ma 1.2 v transition frequency f t v ce =10v, i c = 50ma f=30mhz 100 mhz classification of h fe (1) rank l h j range 120-200 200-350 300-400 so t -23 1. base 2. emitter 3. collector b,jan , 201 2 sot-23 plastic-encapsulate transistors dongguan nanjing electronics ltd.,
0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 11 01 0 0 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 1 10 100 1 10 100 1000 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 1 10 100 1000 1 10 100 1000 300 30 3 30 3 1500 300 30 3 common emitter v ce =1v collcetor current i c (ma) base-emmiter voltage v be (v) i c v be ?? t a =100 t a =25 i c f t ?? transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a SS8050 typical characterisitics collector current i c (ma) base-emitter saturation voltage v besat (v) i c v besat ?? =10 t a =100 t a =25 1500 c ob c ib capacitance c (pf) reverse voltage v (v) v cb / v eb c ob / c ib ?? f=1mhz i e =0/i c =0 t a =25 200 20 300 30 3 300 30 3 3 30 300 300 30 3 30 300 common emitter v ce =1v dc current gain h fe collector current i c (ma) t a =100 t a =25 i c h fe ?? 1500 common emitter t a =25 500ua 450ua 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua collector current i c (ma) collector-emitter voltage v ce (v) static characteristic 3 0.3 30 3 =10 t a =100 t a =25 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? 1500 b,jan ,201 2
|
